Type Transistor Germanium PNP

Case TO3

Manufacturer Betts

Vbr CBO 32

Vbr CEO 30

Max. PD (W) 30

Max. hFE 100

Min hFE 30

Ic Max. (A) 3.5

@Ic (test) (A) 1.0

Ir @ Diff. Temp (A) 100u

VRRM 150

Polarity PNP

1-Cycle Surge Current (A) .30

@Temp (test) (°C) 150

Derate Above 25°C 666m

Vf Max. 1.0

Ir @25°C .50u

I(out) (If AVG) Max. 40m

Trans. Freq (Hz) Min. 450k

@Volts (test) (V) 150

@If (test) 1.0m

Oper. Temp (°C) Max. 100

@VCE (V) 1.0

Pinout Equivalence Number 3-14

Surface Mounted Yes/No NO

Maximum Collector Power Dissipation (Pc) 27 W

Maximum Collector-Base Voltage |Vcb| 32 V

Maximum Collector-Emitter Voltage |Vce| 30 V

Maximum Emitter-Base Voltage |Veb| 10 V

Maximum Collector Current |Ic max| 3.5 A

Max. Operating Junction Temperature (Tj) 100 °C

Transition Frequency (ft): 0.45 MHz

Forward Current Transfer Ratio (hFE), MIN 30